摘要
应用DC(直流)反应磁控溅射设备在硅基底上制备TiO2薄膜,在工作压强为2.0×10-1Pa,氩气流量为42.6 sccm,溅射时间为30 min的条件下,通过控制氧流量改变TiO2薄膜的光学性质。应用n&k Analyzer 1200分析器测量,当氧流量增加时薄膜的平均反射率降低,同时反射低谷向中心波长(550 nm)处移动,薄膜的消光系数k有增大的趋势,但对薄膜的折射率影响不大。通过XRD和SEM表征发现,随着氧流量的增加金红石相的TiO2增多,并且表面趋于致密平滑。
Titanium dioxide films were grown on silicon substrates by DC reactive magnectron sputtering under total gas pressure of 2.0× 10^-1Pa with Argon flow of 42.6 sccm for 30 minutes, and the optical property of TiO2 thin films were changed by controlling the oxygen flow. It is shown, by n＆k analyzer 1200 measurements, that the average reflectance of the films decrease and that the low reflectance vale move towards the center wavelenghth （550 nm）, when the oxygen flow is increased, The refractive index of the films, however, is not affected and the extinction coefficient （k） appears to increase. The characterization of the films were carried out using XRD and SEM, it is found that the mtile phase increased and the surface morphology was dense and smoothness with increasing the oxygen flow.
出处
《中山大学学报（自然科学版）》
CAS
CSCD
北大核心
2005年第6期36-40,共5页
Acta Scientiarum Naturalium Universitatis Sunyatseni
基金
国家自然科学基金资助项目(50376067)
