摘要
应用DC(直流)反应磁控溅射设备在硅基底上制备TiO2薄膜,在固定的电源功率下,氩气流量为42.6sccm,氧流量为15sccm,溅射时间为30min的条件下,通过控制靶基距改变TiO2薄膜的光学性质。应用n&kAnalyzer1200测量,当靶基距增加时薄膜的平均反射率降低,同时反射低谷先短波后长波之后再短波;靶基距对消光系数k影响较大;随着靶基距的增加薄膜的折射率出现了下降的趋势,但当靶基距达到一定的量值时折射率的变化趋于稳定。通过XRD和SEM表征发现,随着靶基距的增加TiO2的晶体结构由金红石相向锐钛矿相转变,薄膜表面的颗粒度大小由粗大变得微小细密。
TiO_2 thin films were prepared on silicon substrates by DC reactive magnetron sputtering under constant power with the flowrates of Ar and O_2 set as 42.6 and 15.0 sccm respectively, for 30min. In the process the optical property was changed by controlling the substrate-to-target distance. The n&k Analyzer measurements showed that the average reflectance decreases with the increasing substrate-to-target distance and meanwhile, a short-long-short change of wave length was observed at the reflected wave trough. The destance affects greatly the extinctoion coefficient k of the films, and the increasing distance leads films' refractivity to lower though it will finally be stable when the distance increases to a certain value. XRD and SEM results also showed that the increasing distance may cause the crystal structure to transform from rutile to anatase phase and the film surface grain size to change from coarse to fine.
出处
《真空》
CAS
北大核心
2005年第1期11-14,共4页
Vacuum
基金
国家自然科学基金项目(50376067)。
关键词
二氧化钛薄膜
直流反应磁控溅射
靶基距
反射率
TiO_2 thin film
DC reactive magnetron sputtering
distance of the substrate-to-target
reflectance
