摘要
研究了气氛加压烧成ＺｒＯ２（Ｙ－ＴＺＰ）－Ｓｉ３Ｎ４复合材料中抑制ＺｒＮ生成工艺问题，相组成分析表明：无论添加２０ｗｔ％工业ＺｒＯ２或者Ｙ－ＴＺＰ（３ｍｏｌ％Ｙ。Ｏ。）的氯化硅复合材料，在低于１８５０℃，３ＭＰａｋ气压力下烧成，表面无ＺｒＮ生成．通过加入有效的烧结助剂（Ｙ。Ｏａ＋ＡＩ。Ｏｓ）、增加埋粉中ＳＩＯ分压以及增加保护气氛氮气压力，适当的烧成条件等工艺措施可有效地抑制ＺｒＮ的生成．实验还证实了ＺｒＮ很容易氧化，含有ＺｒＮ的ＺｒＯ。（Ｙ－ＴＺＰ）－ＳｉｓＮ。复合材料试样经９００℃，０．ｓｈ热处理已粉碎性裂开．
Processes of eliminating formation of ZrN in St3N4/ZrO2 (Y-TZP) Composites were studied, the XRD results indicated that no ZrN could be detected on the surface of St3N4 composites specimens with 20wt%ZrO2 or Y-TZP (3mol%Y2O3) addition sintered at lower than 1850℃ under nitrogen at 3MPa ZrN could be successfully eliminated by such procedures as adding effective sintering aids (Y2O3+Al2O3), raising SiO partial pressure of nitrogen, proper sintering conditions. Experimental results also confirmed that ZrN is easily oxidized, Si3 N4/ZrO2 (Y-TZP) composites specimens containing ZrN broke into pieces after heat treatment at 900℃ for half an hour.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
1996年第2期253-258,共6页
Journal of Inorganic Materials
基金
广东省自然科学基金
关键词
氮化硅
氧化锆
氮化锆
氧化
复合陶瓷
Si_3N_4, ZrO_2, elimination,ZrN formation,oxidization
