摘要
报道用射频加热化学汽相沉积法制备Ｓｉ／ＧｅＳｉ／Ｓｉ大断面单模脊形光波导中设计和工艺的进一步完善。ＧｅＳｉ合金层中Ｇｅ的含量ｘ要满足脊形光波导是单模、光波导的数值、孔径接近单模光纤值、脊高小于临界厚度值等，计算表明兼顾上述三项要求应取ｘ＝１～３％；脊的高与宽受大断面及单模的制约。Ｓｉ的晶体结构使脊的二个腐蚀侧壁是斜坡，为此起始脊宽取５～６μｍ为宜；腐蚀液、抛光液的选取要保证脊侧壁及波导端面的优良镜面。上述设计及工艺优化使光波导的实测性能显著提高，离散性降低。最佳传播损耗已降到０．３ｄＢ／ｃｍ。
The optimization for fabricating large cross section Si/GeSi/Si single mode rib waveguides with RF heated CVD method is discussed. The optimal fraction x of Ge in GeSi layer defined by the necessity of single mode, numerical aperture and critical thickness is between 1￣3%. The height and width of rib must be also limited by the single mode and large cross section, The etched rib side walls are slope due to the Si crystal structure. The best initial width of rib is 5￣6 μm. The etching and polishing solutions must ensure the rib side walls and end faces to be mirror. The measured results show that the performance of the optical waveguides improred remarkably. The output light field is increased and the propagation losses is less than 0.5 dB/cm.
出处
《光学学报》
EI
CAS
CSCD
北大核心
1996年第5期688-691,共4页
Acta Optica Sinica
