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Simulations of Temperature Field in HFCVD Diamond Films over Large Area 被引量:1

Simulations of Temperature Field in HFCVD Diamond Films over Large Area
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摘要 A three-dimensional model was developed to investigate the influence of various hot filaments parameters on substrate temperature fields that significantly affect the nucleation and growth of diamond films over large area by hot-filament chemical vapordeposition (HFCVD). Numerical simulated results indicated that substrate temperature varies as a function of hot filamentsnumber, radius, temperature, emissivity, the distance between filaments, and the distance between substrate and filamentsarrangement plane. When these filaments parameters were maintained at the optimal values, the homogeneous substrate temperature region of 76 mm×76 mm with the temperature fluctuation no more than 5% could be obtained by a 80 mm×80 mmhot filaments arrangement plane. Furthermore, the homogeneous region could be enlarged to 100 mm×100 mm under thecondition of supplementary hot filaments with appropriate parameters. All of these calculations provided the basis for speciallyoptimizing the hot filaments parameters to deposit uniform diamond film over large area by HFCVD. A three-dimensional model was developed to investigate the influence of various hot filaments parameters on substrate temperature fields that significantly affect the nucleation and growth of diamond films over large area by hot-filament chemical vapordeposition (HFCVD). Numerical simulated results indicated that substrate temperature varies as a function of hot filamentsnumber, radius, temperature, emissivity, the distance between filaments, and the distance between substrate and filamentsarrangement plane. When these filaments parameters were maintained at the optimal values, the homogeneous substrate temperature region of 76 mm×76 mm with the temperature fluctuation no more than 5% could be obtained by a 80 mm×80 mmhot filaments arrangement plane. Furthermore, the homogeneous region could be enlarged to 100 mm×100 mm under thecondition of supplementary hot filaments with appropriate parameters. All of these calculations provided the basis for speciallyoptimizing the hot filaments parameters to deposit uniform diamond film over large area by HFCVD.
出处 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2003年第1期22-26,共5页 材料科学技术(英文版)
基金 This work was supported by the National Natural Science Foundation of China (NSFC) under contract No. 59292800 the Science and Technology Committee of Liaoning Province. The authors would like to thank Dr. B.Wang and Dr. G.H.Song for their valuable di
关键词 HFCVD Diamond film Temperature field SIMULATION HFCVD, Diamond film, Temperature field, Simulation
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