摘要
用俄歇电子能谱(AES)对等离子增强化学汽相淀积(PECVD)氢化非晶碳化硅(a-SiC∶H)薄膜进行了组分的深度剖析、半定量分析以及化学分析.俄歇深度剖析曲线表明PECVD淀积的薄膜均匀性非常好;用俄歇半定量结果比较了薄膜成分同淀积工艺参量之间的一些关系;根据实验获得的Si LVV和CKLL俄歇谱比较和讨论了不同[Si]/[C]浓度比薄膜的化学特征.
The compositional depth profiles,semi-quantitative analysis and chemical analysis werecarried out by Auger Electron Spectroscopy (AES) of hydride amorphous silicon carbide (a-SiC:H),thin films formed by Plasma-Enhanced chemical Vapor Depostion (PECVD).Augerdepth profiles show an ideal homogeneity in the Films deposited by PECVD.The correlationbetween the film composition and the deposition parameters is compared by using Auger semi-quantitative results.The chemical properties of the thin films with cifferent [Si]/[C] ratiocsare compared and discussed on the basis of the experimental Si LVV and C KLL Auger Spec-trum.
关键词
PECVD
等离子
薄膜
AES
PECVD
a-SiC:H
AES
Si LVV Auger spectra
C KLL Auger
