摘要
在等离子激发条件下，进行了ＳｉＯ＿２，和ＳｉＯＮ介质薄膜生长实验，研究了沉积参数射频功率、反应压力、反应气体流量比及总流量、反应温度对沉积薄膜的生长速率、均匀性和折射率的影响，并优化了工艺条件，得到了生长速率为１５０ｎｍ／ｍｉｎ、均匀性为±０．４４％、折射率ｎ为１．４６３±０．００２的ＳｉＯ＿２和生长速率为１１７ｎｍ／ｍｉｎ、均匀性为±３．０％、折射率ｎ为１．５０６±０．００４的ＳｉＯＮ介质薄膜。还介绍了这两种介质薄膜的应用。
An experiment on SiO_2 and SiON film growth has been performed under the condition of plasma exitation. Effects of various deposition parameters,such as RF power,reactive gas pres-sure and flow-rate ratio,total flow-rate and temperature,on growth-rate,uniformity and reflectivi-ty of PECVD films have been studied. Under optimized process conditions, SiO_2 films with a uniformity of±0.44%and reflectivity of 1.463±0.002 were grown at 150nm/min growth-rate,and SiON films were obtained at a rate of 117nm/min,with uniformity being ±3%and reflectivity at 1.506±0.004. Applications of both films are described.
出处
《微电子学》
CAS
CSCD
1995年第5期8-13,共6页
Microelectronics
