摘要
本文报道了计算择优生长的多晶硅压阻灵敏度的统计平均理论,由此得到了〈100〉、〈110〉〈111〉、〈211〉、〈311〉、〈331〉等低指数晶向择优生长的p型和n型多晶硅的平均晶粒压阻系数.将这些结果应用到具有多重择优晶向的多晶硅材料,经过计算可进一步得到多晶硅力敏电阻的灵敏度.对于制作在矩形膜中心区域的一系列多晶硅电阻,实验得到的结果与理论分析的结果符合得很好.这些结果为多晶硅压阻型压力传感器的设计提供了有效的手段.
The statistical analysis for the piezoresistive sensitivity of pclysilicon thin film with specialprtferential orientations is presented. Both n-type and p-type average grain piezoresistive coef-ficients of polysilicon with the preferential orientations of <100>、<110>、<111>、<211>、<311> and <331> have been caculated. By using these results and x-ray texture ofpolysilicon, the sensitivity of polysilicon piezoresistance has been obtained.To verify the theo-retical results,the experimental devices are made at the center of a rectangular diaphragm.The experimental results agree with the expected theoretical analysis. Therefore, these resultsare very useful for the design of polysilicon piezoresistive pressure sensors.
基金
传感技术联合开放研究实验室支持的课题
关键词
硅
传感器
力敏电阻器
灵敏度
Silicon
Sensors
Piezoresistor
Sensitivity
pressure
Statistical analysis
