摘要
高温压力传感器因其特殊的应用环境而日益受到人们的重视 .一些特殊的材料如SiC、SOI等可以用来制作高温压力传感器 ,但是由于成本较高或加工难度大等原因 ,尚未得到广泛应用 .本文提出了一种新型的高温压力传感器 ,采用多晶硅作为压敏电阻 ,同时采用新的工艺措施与全耗尽CMOS放大电路集成在一起 ,将输出电压转换为 0～ +5V的输出信号 .通过模拟与投片实验 ,得到了优化的多晶硅注入浓度 ,从而使其压阻温度系数在 - 4 0℃～ 180℃范围内接近于零 .
Pressure sensor for high temperature is very useful for various area applications.Some special materials such as SIC,SOI can be used to manufacture high temperature pressure sensor,but due to the difficult process or/and cost,they are not used widely.In this paper,a novel poly-silicon pressure sensor is designed,further more a CMOS fully depleted integrated circuit is used to change output signal into 0～+5V industrial signal.After simulation and process experiments,the optimized condition of poly-silicon diffusion concentration was found,and the temperature coefficient is reduced to nearly zero between -40℃～180℃.
出处
《电子学报》
EI
CAS
CSCD
北大核心
2003年第11期1736-1738,共3页
Acta Electronica Sinica
