摘要
利用二维泊松方程的解析解,得到了短沟道MOS FET亚阈值电流的解析模型.在弱反型区,解析模型的结果与数值模拟的结果符合较好.
The analytical solution of two-dimensional Poisson's Equation has been used to obtain theanalytical model of subthreshold current for short channel MOSFET.In the scope of weak in-version area, the analytical solution is in good accordance with the numerical reset.
基金
电子部基金
