摘要
采用电荷法,避免使用有效沟道厚度的近似概念,较严格地讨论了MOS场效应管的亚阈值电流、亚阈值摆幅,其结果与实验数据符合较好。
The charge model is adopted to discuss strictly the subthreshold cur-rent and subthreshold gate-voltage swing of a MOSFET without using the effective channel thickness approximation. The analytic results are in good agreement with the experimental data.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1993年第1期9-13,共5页
Research & Progress of SSE
关键词
亚阈值电流
MOS
场效应晶体管
Subthreshold Current, Weak Inversion, MOS Field Effect Transistor
