摘要
采用蒸发淀积、快速热退火（ＲＴＡ）等技术，通过Ｔｉ／Ｓｉ、Ｔｉ／多晶硅固相反应，形成高电导均匀的ＴｉＳｉ＿２薄膜，并将这种钛硅化物形成技术应用于浅结多晶硅发射极工艺中，自对准形成钛硅化物薄膜（Ｔｉ－ＳＡＬＩＣＩＤＥ），以形成良好的欧姆接触和减小器件互连线电阻。本文介绍了钛与单晶硅、多晶硅形成的硅化物及其在浅结多晶硅发射极工艺中的应用研究。
Silicides formed with Ti and single/poly silicon are investigated,and their applications to shallow junction polysilicon emitter process are examined in the paper.In our experiment,TiSi_2 films with uniform high conductivity are formed through the solid-phase reaction of Ti/Si and Ti/poly -Si using evaporating deposition, rapid thermal annealing(RTA)and other techniques.The self -aligned TiSi_2 film obtained greatly improves ohm-contact and reduces interconnect resistance of the device ,thus enhancing the performance of the transistor.
出处
《微电子学》
CAS
CSCD
1995年第5期4-7,共4页
Microelectronics
