摘要
用电子束蒸发方法在10^(-7)托真空中使单晶硅上蒸上一层Ti膜后,于N_2中进行从500-1000℃10秒钟的快速热退火,由激光喇曼光谱结合薄层电阻测量和转靶X射线衍射研究分析了TiSi_2的形成.退火温度高于680℃时,观察到207和244cm^(-1)波数处的两个TiSi_2的特征喇曼峰,当退火温度为580℃时,只有270,297和3ncm^(-1)的三个喇曼峰,这些可能是钛的氧化物和不包括TiSi的钛硅化物.
Titanium thin films were deposited on Si wafers by electron-beam evaporation in vacu-tun under the pressure of 10^(-7) Torr.The rapid thermal annealings then were performed inN_2 at temperatures between 500 and 1000℃ for 10 s. The formation of TiSi_2 is investigated bylaser Raman spectroscopy,sheet resistance measurements and XRD. At annealing temperaturehigher than 680℃, two characteristic Raman peaks of TiSi_2 are observed at 207 and 244 cm^(-1)When the annealing was performed at 580℃, only three peaks at 270, 297 and 341 cm^(-1) areobserved in Raman spectrum.These peaks probably are induced by titanium oxides and sili-tides except TiSi_2 and TiSi.
基金
中国科学技术大学结构分析开放研究实验室资助
关键词
硅化物
喇曼散射
退火
金属
Titanium silicide
Raman scattering
Rapid thermal annealing
