摘要
本文研究了重掺杂对两步快速退火(RTA)形成的钛硅化物的影响及形成机理,认为,重掺杂有妨碍TiSi_2形成的作用,钛硅化物的形成过程由硅的扩散和硅化物的成核过程组成。
The influence of heavily doping on Titanium silicides formed by two-step rapid thermal annealing (RTA) and their formation mechanism have been studied.The results indicate that the heavilv doping retard TiSi_2 formation and the Titanium silicides formation is composed of silicon diffusion and silicides nucleaed reaction.
出处
《微电子学与计算机》
CSCD
北大核心
1992年第2期44-47,共4页
Microelectronics & Computer
关键词
重掺杂
钛硅化物
掺杂
Heavily Doping, Titanium Silicides.
