摘要
讨论了用射频磁控溅射技术制备的ＰＬＺＴ（７．５／６５／３５）薄膜的结构和铁电性能。研究表明，在不同的基片温度下所获得的薄膜都有（２１０）和（００２）取向的钙钛矿结构，但取向不同，峰值差别很大；经过退火处理后薄膜结构差异变小；添加少量的ＰｂＯ有利于薄膜的钙钛矿晶相的生长，ＰＬＺＴ薄膜的微观结构均匀，电性能较好。
At different substrate temperatures,the ferroelectric thin films with a composition of(Pb0.925 La0.075)(Zr0.65Ti0.35)0.981O3 had been prepared on Pt-coated Si substrates by rf mag-netron sputtering, The effect of substrate temperature on thin film structure was discussed.Based on the forming mechanism of titanium zirconium oxide(TZO),a small amount of PbOwas added to obtain PLZT thin film of good quality. Its hysteresis loop shows a remanentpolarization of 17.6μC/cm2 and a coercive field of 38. 9 kV/cm.
出处
《华中理工大学学报》
CSCD
北大核心
1995年第3期52-56,共5页
Journal of Huazhong University of Science and Technology
基金
国家高技术863计划资助项目
关键词
射频磁控溅射
薄膜
铁电性能
显微结构
rf magnetron sputtering
ferroelectric thin film
microstructure
ferroelectric property,
