摘要
通过对CMOS数字电路器件及RF脉冲扰乱效应的模拟分析,比较了注入不同频率与功率的RF扰乱脉冲时对CMOS反相器输出逻辑电平扰乱甚至翻转的效应过程。
By simulation analysis of RF pulse disturbance effect on CMOS digital circuit components level, the process of disturbance even the turnover effect on output logic level of CMOS inverter is compared while injecting RF disturbance pulse with different frequency and power.
出处
《火控雷达技术》
2009年第2期82-85,共4页
Fire Control Radar Technology
关键词
CMOS反相器
扰乱效应
注入实验
CMOS inverter
disturbance effects
injection experiment
