摘要
少子寿命是PIN二极管的重要参数。对二极管的正向导通压降和开关时间有重要影响。本文介绍了常用的测量低掺杂区少子寿命的方法 ,包括阶越反向恢复法、线性反向恢复法、储存电荷法、开路电压衰减法 (OCVD)和射频测试法 ,并指出了各种方法的优点和不足。重点介绍了阶越反向恢复法和线性反向恢复法 ,对实际的测试过程具有一定的指导作用。
Minority carrier lifetime is an important parameter for PIN diodes. It determines the voltage drop in forward conduction and switching time. This paper introduces the commonly used methods of measuring minority carrier lifetime, including the open circuit voltage decay, the step reverse recovery, the ramp recovery, stored charge and RF technique for determining carrier lifetime. It also analyses the advantage and disadvantage of every method. The step reverse recovery and the ramp recovery are emphasized. This paper is useful for measuring minority carrier lifetime in practice.
出处
《电子器件》
CAS
2004年第2期236-240,231,共6页
Chinese Journal of Electron Devices
关键词
PIN二极管
少子寿命
开关时间
连续性方程
PIN diodes
minority-carrier lifetime
switching time
continuity equation
