The hybridization gap in strained-layer InAs/In_(x)Ga_(1−x) Sb quantum spin Hall insulators(QSHIs)is significantly enhanced compared to binary InAs/GaSb QSHI structures,where the typical indium composition,x,ranges be...The hybridization gap in strained-layer InAs/In_(x)Ga_(1−x) Sb quantum spin Hall insulators(QSHIs)is significantly enhanced compared to binary InAs/GaSb QSHI structures,where the typical indium composition,x,ranges between 0.2 and 0.4.This enhancement prompts a critical question:to what extent can quantum wells(QWs)be strained while still preserving the fundamental QSHI phase?In this study,we demonstrate the controlled molecular beam epitaxial growth of highly strained-layer QWs with an indium composition of x=0.5.These structures possess a substantial compressive strain within the In_(0.5)Ga_(0.5)Sb QW.Detailed crystal structure analyses confirm the exceptional quality of the resulting epitaxial films,indicating coherent lattice structures and the absence of visible dislocations.Transport measurements further reveal that the QSHI phase in InAs/In_(0.5)Ga_(0.5)Sb QWs is robust and protected by time-reversal symmetry.Notably,the edge states in these systems exhibit giant magnetoresistance when subjected to a modest perpendicular magnetic field.This behavior is in agreement with the𝑍2 topological property predicted by the Bernevig–Hughes–Zhang model,confirming the preservation of topologically protected edge transport in the presence of enhanced bulk strain.展开更多
Using Harrison's model and anisotropic parabolic approximation,the band structure of In1- x- y Gay Alx As compressively strained quantum wells is calculated.To design lasers with1.55μm wavelength,it is necessary...Using Harrison's model and anisotropic parabolic approximation,the band structure of In1- x- y Gay Alx As compressively strained quantum wells is calculated.To design lasers with1.55μm wavelength,it is necessary to an- alyze the well width,differential gain,transparency carrier density and the characteristic gain for an arbitrary com- position.Some useful empirical formulas are also presented.展开更多
In this paper,we report the exciton polaritons in both positive and negative detuning micro cavities based on InGaN multi-quantum wells(MQWs)and the first polariton lasing in InGaN/GaN MQWs at room temperature by util...In this paper,we report the exciton polaritons in both positive and negative detuning micro cavities based on InGaN multi-quantum wells(MQWs)and the first polariton lasing in InGaN/GaN MQWs at room temperature by utilizing a 4.5λFabry-Perot(F-P)cavity with double dielectric distributed Bragg reflectors(DBRs).Double thresholds corresponding respectively to polariton lasing and photonic lasing are observed along with half-width narrowing and peak blue-shifts.The threshold of polariton lasing is about half of the threshold of photonic lasing.Our results paved a substantial way for ultra-low threshold lasers and room temperature Bose-Einstein Condensate(BEC)in nitride semiconductors.展开更多
The well number and the cavity length of 1.55μm wavelength In 1-x-y Ga y Al x As MQW DFB lasers are optimized using a simple model.A low threshold,maximum operating temperature of 550～560K,and high relaxat...The well number and the cavity length of 1.55μm wavelength In 1-x-y Ga y Al x As MQW DFB lasers are optimized using a simple model.A low threshold,maximum operating temperature of 550～560K,and high relaxation oscillation frequency of over 30GHz MQW DFB laser is presented.展开更多
Based on the dielectric continuum model and Loudon＇s uniaxial crystal model, the properties of the quasi. confined （QC） optical phonon dispersions and the electron-QC phonons coupling functions in an asymmetric wur...Based on the dielectric continuum model and Loudon＇s uniaxial crystal model, the properties of the quasi. confined （QC） optical phonon dispersions and the electron-QC phonons coupling functions in an asymmetric wurtzite quantum well （QW） are deduced via the method of electrostatic .potential expanding. The present theoretical scheme can naturally reduce to the results in symmetric wurtzite QW once a set of symmetric structural parameters are chosen. Numerical calculations on an asymmetric AlN/GaN/AIo,15 Gao.85N Wurtzite Q W are performed. A detailed comparison with the symmetric wurtzite QW was also performed. The results show that the structural asymmetry of wurtzite QW changes greatly the dispersion frequencies and the electrostatic potential distributions of the QC optical phonon modes.展开更多
基金supported by the Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos.XDB28000000 and XDB0460000)the Quantum Science and Technology-National Science and Technology Major Project (Grant No.2021ZD0302600)the National Key Research and Development Program of China(Grant No.2024YFA1409002)。
文摘The hybridization gap in strained-layer InAs/In_(x)Ga_(1−x) Sb quantum spin Hall insulators(QSHIs)is significantly enhanced compared to binary InAs/GaSb QSHI structures,where the typical indium composition,x,ranges between 0.2 and 0.4.This enhancement prompts a critical question:to what extent can quantum wells(QWs)be strained while still preserving the fundamental QSHI phase?In this study,we demonstrate the controlled molecular beam epitaxial growth of highly strained-layer QWs with an indium composition of x=0.5.These structures possess a substantial compressive strain within the In_(0.5)Ga_(0.5)Sb QW.Detailed crystal structure analyses confirm the exceptional quality of the resulting epitaxial films,indicating coherent lattice structures and the absence of visible dislocations.Transport measurements further reveal that the QSHI phase in InAs/In_(0.5)Ga_(0.5)Sb QWs is robust and protected by time-reversal symmetry.Notably,the edge states in these systems exhibit giant magnetoresistance when subjected to a modest perpendicular magnetic field.This behavior is in agreement with the𝑍2 topological property predicted by the Bernevig–Hughes–Zhang model,confirming the preservation of topologically protected edge transport in the presence of enhanced bulk strain.
文摘Using Harrison's model and anisotropic parabolic approximation,the band structure of In1- x- y Gay Alx As compressively strained quantum wells is calculated.To design lasers with1.55μm wavelength,it is necessary to an- alyze the well width,differential gain,transparency carrier density and the characteristic gain for an arbitrary com- position.Some useful empirical formulas are also presented.
基金National Key Research and Development Program of China(No.2016YFB0400803)the Science Challenge Project(No.TZ2016003)the National Natural Science Foundation of China(Nos.61704140,U1505253).
文摘In this paper,we report the exciton polaritons in both positive and negative detuning micro cavities based on InGaN multi-quantum wells(MQWs)and the first polariton lasing in InGaN/GaN MQWs at room temperature by utilizing a 4.5λFabry-Perot(F-P)cavity with double dielectric distributed Bragg reflectors(DBRs).Double thresholds corresponding respectively to polariton lasing and photonic lasing are observed along with half-width narrowing and peak blue-shifts.The threshold of polariton lasing is about half of the threshold of photonic lasing.Our results paved a substantial way for ultra-low threshold lasers and room temperature Bose-Einstein Condensate(BEC)in nitride semiconductors.
文摘The well number and the cavity length of 1.55μm wavelength In 1-x-y Ga y Al x As MQW DFB lasers are optimized using a simple model.A low threshold,maximum operating temperature of 550～560K,and high relaxation oscillation frequency of over 30GHz MQW DFB laser is presented.
基金The project supported by National Natural Science Foundation of China under Grant Nos. 60276004 and 6939007,3, the Scientilic Research Foundation for the Returned 0overseas Chinese Scholars State Education Ministry of China
文摘Based on the dielectric continuum model and Loudon＇s uniaxial crystal model, the properties of the quasi. confined （QC） optical phonon dispersions and the electron-QC phonons coupling functions in an asymmetric wurtzite quantum well （QW） are deduced via the method of electrostatic .potential expanding. The present theoretical scheme can naturally reduce to the results in symmetric wurtzite QW once a set of symmetric structural parameters are chosen. Numerical calculations on an asymmetric AlN/GaN/AIo,15 Gao.85N Wurtzite Q W are performed. A detailed comparison with the symmetric wurtzite QW was also performed. The results show that the structural asymmetry of wurtzite QW changes greatly the dispersion frequencies and the electrostatic potential distributions of the QC optical phonon modes.
