摘要
In this paper,we report the exciton polaritons in both positive and negative detuning micro cavities based on InGaN multi-quantum wells(MQWs)and the first polariton lasing in InGaN/GaN MQWs at room temperature by utilizing a 4.5λFabry-Perot(F-P)cavity with double dielectric distributed Bragg reflectors(DBRs).Double thresholds corresponding respectively to polariton lasing and photonic lasing are observed along with half-width narrowing and peak blue-shifts.The threshold of polariton lasing is about half of the threshold of photonic lasing.Our results paved a substantial way for ultra-low threshold lasers and room temperature Bose-Einstein Condensate(BEC)in nitride semiconductors.
基金
National Key Research and Development Program of China(No.2016YFB0400803)
the Science Challenge Project(No.TZ2016003)
the National Natural Science Foundation of China(Nos.61704140,U1505253).
