The complicated structure of electronic devices makes the conventional annealing method,which involves placing the entire device in a furnace,insufficient for achieving the desired quality.This issue is currently addr...The complicated structure of electronic devices makes the conventional annealing method,which involves placing the entire device in a furnace,insufficient for achieving the desired quality.This issue is currently addressed through the use of pulsed laser annealing,where a specific target layer is heated,preventing the overheating of other layers or the substrate.However,this method is only applicable to a very limited range of materials and requires very expensive,powerful pulsed laser sources.Herein,a novel approach for the selective local thermal treatment of thin films is proposed;in this method,short,powerful current pulses are applied to the target conductive layer.The application of two current pulses with a length of 1.5 s induced the crystallization of a 160-nm thick indium tin oxide(ITO)film,resulting in a sheet resistance of 8.68Ω·sq^(-1),an average visible light transmittance of 86.69%,and a figure of merit(FoM)of 293.61.This FoM is an order of magnitude higher than that of the as-prepared ITO film,and to the best of our knowledge,is among the highest reported values for the polycrystalline ITO films.Simulations have shown that even faster and more localized crystallization could be achieved by increasing the power of pulsed current.This novel annealing method is applicable to most semi-conductive or metallic thin films and requires only a relatively inexpensive pulsed current source,making it potentially more attractive than pulsed laser annealing.展开更多
Indium tin oxide (ITO) films were prepared on polyester, Si and glass substrate with relatively high deposition rate of above 0.9 nm/s by DC reactive magnetron sputtering technique at the sputtering pressure of 0.06 P...Indium tin oxide (ITO) films were prepared on polyester, Si and glass substrate with relatively high deposition rate of above 0.9 nm/s by DC reactive magnetron sputtering technique at the sputtering pressure of 0.06 Pa system, respectively. The dependence of resistivity on deposition parameters, such as deposition rate, target-to-substrate distance (TSD), oxygen flow rate and sputtering time (thickness), has been investigated, together with the structural and the optical properties. It was revealed that all ITO films exhibited lattice expansion. The resistivity of ITO thin films shows significant substrate effect: much lower resistivity and broader process window have been reproducibly achieved for the deposition of ITO films onto polyester rather than those prepared on both Si and glass substrates. The films with resistivity of as low as 4.23 x 10^-4 Ω.cm and average transmittance of ～78% at wavelength of 400～700 nm have been achieved for the films on polyester at room temperature.展开更多
This paper reports the fabrication of regular large-area laser-induced periodic surface structures(LIPSSs)in indium tin oxide(ITO)films via femtosecond laser direct writing focused by a cylindrical lens.The regular LI...This paper reports the fabrication of regular large-area laser-induced periodic surface structures(LIPSSs)in indium tin oxide(ITO)films via femtosecond laser direct writing focused by a cylindrical lens.The regular LIPSSs exhibited good properties as nanowires,with a resistivity almost equal to that of the initial ITO film.By changing the laser fluence,the nanowire resistances could be tuned from 15 to 73 kΩ/mm with a consistency of±10%.Furthermore,the average transmittance of the ITO films with regular LIPSSs in the range of 1200-2000 nm was improved from 21%to 60%.The regular LIPSS is promising for transparent electrodes of nano-optoelectronic devices-particularly in the near-infrared band.展开更多
High-quality ITO films on flexible PET substrate were prepared by RF magnetron sputtering at low deposition temperature with different Ar gas sputtering pressure.Adhesion and electro-optical properties of ITO films we...High-quality ITO films on flexible PET substrate were prepared by RF magnetron sputtering at low deposition temperature with different Ar gas sputtering pressure.Adhesion and electro-optical properties of ITO films were investigated as a function of Ar partial pressure.The sputtering conditions provide very uniform ITO films with high transparency(>85%in 400-760 nm spectra)and low electrical resistivity(1.408×10^(-3)-1.956×10^(-3)Ω·cm).Scratch test experiments indicate that there is a good adhesion property between ITO films and PET substrate,the critical characteristic load increases from 16.5 to 23.2 N with increasing Ar sputtering pressure from 0.2 to 1.4 Pa.展开更多
Indium tin oxide(ITO)thin films were prepared using the technique of rf-sputtering with oblique angle deposition(OAD).The films were as-deposited and thermally treated at 250℃.The combination of substrate inclination...Indium tin oxide(ITO)thin films were prepared using the technique of rf-sputtering with oblique angle deposition(OAD).The films were as-deposited and thermally treated at 250℃.The combination of substrate inclination and annealing was used for modifying morphological and structural properties that lead to changes of the optical properties.The resulting films show morphology of tilted nanocolumn,fissures among columns,and structural changes.The as-deposited films are structurally disordered with an amorphous component and the annealed films are crystallized and more ordered and the film diffractograms correspond to the cubic structure of In2O3.The refractive index could be modified up to 0.3 in as-deposited films and up to 0.15 in annealed films as functions of the inclination angle of the nanocolumns.Similarly,the band gap energy increases up to about 0.4 eV due to the reduction of the microstrain distribution.It is found that the microstrain distribution,which is related to lattice distortions,defects and the presence of fissures in the films,is the main feature that can be engineered through morphological modifications for achieving the adjustment of the optical properties.展开更多
Indium-tin-oxide(ITO)films were prepared on the quarts glass by sol-gel technique.Effects of different heat treatment temperatures and cooling methods on the morphological,optical and electrical properties of ITO film...Indium-tin-oxide(ITO)films were prepared on the quarts glass by sol-gel technique.Effects of different heat treatment temperatures and cooling methods on the morphological,optical and electrical properties of ITO films were measured by TG/DTA, IR,XRD,SEM,UV-VIS spectrometer and four-probe apparatus.It is found that the crystallized ITO films exhibit a polycrystalline cubic bixbyite structure.The heat treatment process has significant effects on the morphological,optical and electrical properties of ITO films.Elevating the heat treatment temperature can perfect the crystallization process of ITO films,therefore the optical and electrical properties of ITO films are improved.But the further increasing of heat treatment temperature results in the increment of ITO films’resistivity.Compared with ITO films elaborated by furnace cooling,those prepared through air cooling have following characteristics as obviously decreased crystalline size,deeply declined porosity,more compact micro-morphology,improved electrical property and slightly decreased optical transmission.展开更多
Indium-tin-oxide(ITO)films with different sputtering time have been prepared by dc magnetron sputtering method on PET substrate at room temperature.The film structure,thickness,electrical and optical properties are in...Indium-tin-oxide(ITO)films with different sputtering time have been prepared by dc magnetron sputtering method on PET substrate at room temperature.The film structure,thickness,electrical and optical properties are investigated through XRD,SEM,van der Pauw method and FTIR,respectively.The XRD results indicate that all the films are amorphous structure.With the increase of sputtering time,resistivity and transmittance decrease simultaneously.However the absorption gets stronger,especially in near-infrared light region.Through Drude model the plasma frequency is calculated and the calculation result is pretty consistent with films deposited at 60 and 90 min.展开更多
We deposited indium-tin-oxide(ITO)films on silicon and quartz substrates by magnetron sputtering technology in pure argon.Using electrostatic quadrupole plasma diagnostic technology,we investigate the effects of disch...We deposited indium-tin-oxide(ITO)films on silicon and quartz substrates by magnetron sputtering technology in pure argon.Using electrostatic quadrupole plasma diagnostic technology,we investigate the effects of discharge power and discharge pressure on the ion flux and energy distribution function of incidence on the substrate surface,with special attention to the production of high-energy negative oxygen ions,and elucidate the mechanism behind its production.At the same time,the structure and properties of ITO films are systematically characterized to understand the potential effects of high energy oxygen ions on the growth of ITO films.Combining with the kinetic property analysis of sputtering damage mechanism of transparent conductive oxide(TCO)thin films,this study provides valuable physical understanding of optimization of TCO thin film deposition process.展开更多
Indium tin oxide(ITO)heating film is primarily used as the defogging component of an instrument observation window.Conventionally,a constant current is used to heat the film.Through the feedback of the temperature sen...Indium tin oxide(ITO)heating film is primarily used as the defogging component of an instrument observation window.Conventionally,a constant current is used to heat the film.Through the feedback of the temperature sensing component,the output current is adjusted to achieve a set temperature.However,the temperature of the heating film is nonuniformly distributed,and determining the correct output current is time-consuming.This study adopted finite element heat transfer analysis to determine a heating method(such as heat power and heat flux)for an ITO conductive heating film system.The results of the analysis may serve as a reference for temperature compensation in ITO conductive heating films.展开更多
ITO （indium oxide doped with tin） thin films were deposited on glass substrates by using ITO pellet with a composition of w（In2O3）=90% and w（SnO2）=10% by electron beam evaporated with End-Hall ion source assiste...ITO （indium oxide doped with tin） thin films were deposited on glass substrates by using ITO pellet with a composition of w（In2O3）=90% and w（SnO2）=10% by electron beam evaporated with End-Hall ion source assisted without extra heating. The rate of deposition and flow rate of oxygen were measured and changed to obtain the best properties of ITO thin films. Furthermore, the post annealing process was done in vacuum at different annealing temperatures for 2 h and at 400℃ for different keeping time, respectively. The relation between optical, electrical properties and structure was discussed in detail.展开更多
In_2O_3∶SnO_2(ITO) thin films were fabricated on the substrate of flexible polyethylene terephthalate(PET) by DC magnetron sputtering from a ceramic target of In_2O_3/SnO_2(90∶10). Properties of the thin films were ...In_2O_3∶SnO_2(ITO) thin films were fabricated on the substrate of flexible polyethylene terephthalate(PET) by DC magnetron sputtering from a ceramic target of In_2O_3/SnO_2(90∶10). Properties of the thin films were characterized by X-ray diffraction(XRD), four-point probe, Hall-effect measurement, UV-Vis spectrophotometer, and scanning electron microscopy(SEM). The effects of sputtering pressure, oxygen partial pressure and deposition temperature on properties of microstructure and optoelectronics properties of PET/ITO thin films were investigated in detail. High-quality ITO thin films on PET substrates with the resistivity as low as 8.5×10-4 Ω·cm and the optical transmittance over 80% in the visible spectrum range were obtained.展开更多
The ITO transparent conductive films were prepared on substrate of quartz glass by sol-gel method.The raw materials were nitrate indium,acetylacetone and the dopant of anhydrous chloride(SnCl4).The process from gel to...The ITO transparent conductive films were prepared on substrate of quartz glass by sol-gel method.The raw materials were nitrate indium,acetylacetone and the dopant of anhydrous chloride(SnCl4).The process from gel to crystalline film and the microstructure of the films were investigated by DTA-TG,XRD and SEM.The influence of preparation processes on the electricity performance of the films was also studied by four-probe apparatus.The results show that the crystallization process of ITO xerogel completes when the heat treatment temperature reaches 600 ℃.The ITO films possesses on vesicular structures accumulated by spherical particles,and both heat treatment temperature and cooling rate have important effects on the resistivity of ITO films.展开更多
Omnidirectional photodetectors attract enormous attention due to their prominent roles in optical tracking systems and omnidirectional cameras.However,it is still a challenge for the construction of high-performance o...Omnidirectional photodetectors attract enormous attention due to their prominent roles in optical tracking systems and omnidirectional cameras.However,it is still a challenge for the construction of high-performance omnidirectional photodetectors where the incident light can be effectively absorbed in multiple directions and the photo-generated carriers can be effectively collected.Here,a high-performance omnidirectional self-powered photodetector based on the CsSnBr_(3)/indium tin oxide(ITO)heterostructure film was designed and demonstrated.The as-fabricated photodetector exhibited an excellent self-powered photodetection performance,showing responsivity and detectivity up to 35.1 mA/W and 1.82×10^(10) Jones,respectively,along with the smart rise/decay response time of 4 ms/9 ms.Benefitting from the excellent photoelectric properties of the CsSnBr_(3) film as well as the ability of the CsSnBr_(3)/ITO heterostructure to efficiently separate and collect photo-generated carriers,the as-fabricated photodetector also exhibited an excellent omnidirectional self-powered photodetection performance.All the results have certified that this work finds an efficient way to realize high-performance omnidirectional self-powered photodetectors.展开更多
A new effective tool design of three-rank form of electroremoval was present using a precision recycle system offering faster performance in removing the indium-tin-oxide(ITO) thin-films on color filter surface of dis...A new effective tool design of three-rank form of electroremoval was present using a precision recycle system offering faster performance in removing the indium-tin-oxide(ITO) thin-films on color filter surface of displays. Higher electric power is not required since the three-rank form tool is adopted as a feeding mode to reduce the response area. The low yield of ITO persists throughout the entire semiconductor production process. By establishing a recycle process of ultra-precise removal of the thin-film nanostructure, defective products in the optoelectronic semiconductors industry can be effectively recycled, decreasing both production costs and pollution. A 5th generation TFT-LCD was used. The design features of the removal processes for the thin-films and the tool design of three-rank form were of major interest. For the precision removal processes, a pulsed current can improve the effect of dreg discharge and contributes to the achievement of a fast workpiece (displays' color filter) feed rate, but raises the current rating. High flow velocity of the electrolyte with a high rotational speed of the tool electrodes elevates the ITO removal effect. A displays' color filter with a fast feed rate is combined with enough electric power to provide highly effective removal. A small thickness of the rank and a small arc angle of the negative-electrode correspond to a higher removal rate for ITO-film. An effective three-rank form negative-electrode provides larger discharge mobility and better removal effect. It only needs a short period of time to remove the ITO easily and cleanly.展开更多
In this study, indium tin oxide (ITO) thin films were prepared by electron beam evaporation method on float glass substrates at room temperature (RT). The surface morphology and dynamic scaling behavior of the films w...In this study, indium tin oxide (ITO) thin films were prepared by electron beam evaporation method on float glass substrates at room temperature (RT). The surface morphology and dynamic scaling behavior of the films were studied by atomic force microscopy (AFM). It was found that average surface roughness values decreased as the film thickness increased from 100 nm to 350 nm. Fractal geometry and statistical physics techniques have been used to study a variety of irregular films within a common framework of the variance thickness. The Hurst exponent H and growth exponent ? for ITO thin films were determined to be 0.73 ? 0.01 and 0.078, respectively. Based on these results, we suggest that the growth of ITO thin films can be described by the combination of the Edwards-Wilkinson equation and Mullins diffusion equation.展开更多
基金supported by the National Key R&D Program of China(No.2021YFB2801600)the National Natural Science Foundation of China(Nos.52072060,52202164 and 52021001)the Natural Science Foundation of Sichuan(Nos.2023NSFSC1950 and 2022NSFSC1990).
文摘The complicated structure of electronic devices makes the conventional annealing method,which involves placing the entire device in a furnace,insufficient for achieving the desired quality.This issue is currently addressed through the use of pulsed laser annealing,where a specific target layer is heated,preventing the overheating of other layers or the substrate.However,this method is only applicable to a very limited range of materials and requires very expensive,powerful pulsed laser sources.Herein,a novel approach for the selective local thermal treatment of thin films is proposed;in this method,short,powerful current pulses are applied to the target conductive layer.The application of two current pulses with a length of 1.5 s induced the crystallization of a 160-nm thick indium tin oxide(ITO)film,resulting in a sheet resistance of 8.68Ω·sq^(-1),an average visible light transmittance of 86.69%,and a figure of merit(FoM)of 293.61.This FoM is an order of magnitude higher than that of the as-prepared ITO film,and to the best of our knowledge,is among the highest reported values for the polycrystalline ITO films.Simulations have shown that even faster and more localized crystallization could be achieved by increasing the power of pulsed current.This novel annealing method is applicable to most semi-conductive or metallic thin films and requires only a relatively inexpensive pulsed current source,making it potentially more attractive than pulsed laser annealing.
文摘Indium tin oxide (ITO) films were prepared on polyester, Si and glass substrate with relatively high deposition rate of above 0.9 nm/s by DC reactive magnetron sputtering technique at the sputtering pressure of 0.06 Pa system, respectively. The dependence of resistivity on deposition parameters, such as deposition rate, target-to-substrate distance (TSD), oxygen flow rate and sputtering time (thickness), has been investigated, together with the structural and the optical properties. It was revealed that all ITO films exhibited lattice expansion. The resistivity of ITO thin films shows significant substrate effect: much lower resistivity and broader process window have been reproducibly achieved for the deposition of ITO films onto polyester rather than those prepared on both Si and glass substrates. The films with resistivity of as low as 4.23 x 10^-4 Ω.cm and average transmittance of ～78% at wavelength of 400～700 nm have been achieved for the films on polyester at room temperature.
基金We are grateful for financial supports from the Ministry of Science and Technology of China(Grant No.2021YFA1401100)National Natural Science Foundation of China(Grant Nos.12074123,11804227,91950112),and the Foundation of‘Manufacturing beyond limits’of Shanghai.
文摘This paper reports the fabrication of regular large-area laser-induced periodic surface structures(LIPSSs)in indium tin oxide(ITO)films via femtosecond laser direct writing focused by a cylindrical lens.The regular LIPSSs exhibited good properties as nanowires,with a resistivity almost equal to that of the initial ITO film.By changing the laser fluence,the nanowire resistances could be tuned from 15 to 73 kΩ/mm with a consistency of±10%.Furthermore,the average transmittance of the ITO films with regular LIPSSs in the range of 1200-2000 nm was improved from 21%to 60%.The regular LIPSS is promising for transparent electrodes of nano-optoelectronic devices-particularly in the near-infrared band.
基金This work was financially supported bythe Sichuan Outstanding Youth Foundation of China(No.04ZQ026-008)Thanks are due to the Foundation Franco Chinoise pour la Science et ses Applications(FF-CSA)
文摘High-quality ITO films on flexible PET substrate were prepared by RF magnetron sputtering at low deposition temperature with different Ar gas sputtering pressure.Adhesion and electro-optical properties of ITO films were investigated as a function of Ar partial pressure.The sputtering conditions provide very uniform ITO films with high transparency(>85%in 400-760 nm spectra)and low electrical resistivity(1.408×10^(-3)-1.956×10^(-3)Ω·cm).Scratch test experiments indicate that there is a good adhesion property between ITO films and PET substrate,the critical characteristic load increases from 16.5 to 23.2 N with increasing Ar sputtering pressure from 0.2 to 1.4 Pa.
基金supported by the Project No.CB/2012/178748 CONACYT/México
文摘Indium tin oxide(ITO)thin films were prepared using the technique of rf-sputtering with oblique angle deposition(OAD).The films were as-deposited and thermally treated at 250℃.The combination of substrate inclination and annealing was used for modifying morphological and structural properties that lead to changes of the optical properties.The resulting films show morphology of tilted nanocolumn,fissures among columns,and structural changes.The as-deposited films are structurally disordered with an amorphous component and the annealed films are crystallized and more ordered and the film diffractograms correspond to the cubic structure of In2O3.The refractive index could be modified up to 0.3 in as-deposited films and up to 0.15 in annealed films as functions of the inclination angle of the nanocolumns.Similarly,the band gap energy increases up to about 0.4 eV due to the reduction of the microstrain distribution.It is found that the microstrain distribution,which is related to lattice distortions,defects and the presence of fissures in the films,is the main feature that can be engineered through morphological modifications for achieving the adjustment of the optical properties.
基金Project(50271084)supported by the National Natural Science Foundation of China
文摘Indium-tin-oxide(ITO)films were prepared on the quarts glass by sol-gel technique.Effects of different heat treatment temperatures and cooling methods on the morphological,optical and electrical properties of ITO films were measured by TG/DTA, IR,XRD,SEM,UV-VIS spectrometer and four-probe apparatus.It is found that the crystallized ITO films exhibit a polycrystalline cubic bixbyite structure.The heat treatment process has significant effects on the morphological,optical and electrical properties of ITO films.Elevating the heat treatment temperature can perfect the crystallization process of ITO films,therefore the optical and electrical properties of ITO films are improved.But the further increasing of heat treatment temperature results in the increment of ITO films’resistivity.Compared with ITO films elaborated by furnace cooling,those prepared through air cooling have following characteristics as obviously decreased crystalline size,deeply declined porosity,more compact micro-morphology,improved electrical property and slightly decreased optical transmission.
基金National Natural Science Foundations of China(51071038)Program for New Century Excellent Talents in University(NCET-09-0265)+1 种基金SichuanProvince Science Foundation for Youths(2010JQ0002)State Key Laboratory for Mechanical Behavior of Materials(201011005)
文摘Indium-tin-oxide(ITO)films with different sputtering time have been prepared by dc magnetron sputtering method on PET substrate at room temperature.The film structure,thickness,electrical and optical properties are investigated through XRD,SEM,van der Pauw method and FTIR,respectively.The XRD results indicate that all the films are amorphous structure.With the increase of sputtering time,resistivity and transmittance decrease simultaneously.However the absorption gets stronger,especially in near-infrared light region.Through Drude model the plasma frequency is calculated and the calculation result is pretty consistent with films deposited at 60 and 90 min.
基金supported by the National Key R&D Program of China(Grant No.2022YFE03050001)the National Natural Science Foundation of China(Grant Nos.12175160 and 12305284).The authors thank Suzhou Maxwell Technologies Co.,Ltd.for partial hardware and particle financial support to carry out the research.
文摘We deposited indium-tin-oxide(ITO)films on silicon and quartz substrates by magnetron sputtering technology in pure argon.Using electrostatic quadrupole plasma diagnostic technology,we investigate the effects of discharge power and discharge pressure on the ion flux and energy distribution function of incidence on the substrate surface,with special attention to the production of high-energy negative oxygen ions,and elucidate the mechanism behind its production.At the same time,the structure and properties of ITO films are systematically characterized to understand the potential effects of high energy oxygen ions on the growth of ITO films.Combining with the kinetic property analysis of sputtering damage mechanism of transparent conductive oxide(TCO)thin films,this study provides valuable physical understanding of optimization of TCO thin film deposition process.
文摘Indium tin oxide(ITO)heating film is primarily used as the defogging component of an instrument observation window.Conventionally,a constant current is used to heat the film.Through the feedback of the temperature sensing component,the output current is adjusted to achieve a set temperature.However,the temperature of the heating film is nonuniformly distributed,and determining the correct output current is time-consuming.This study adopted finite element heat transfer analysis to determine a heating method(such as heat power and heat flux)for an ITO conductive heating film system.The results of the analysis may serve as a reference for temperature compensation in ITO conductive heating films.
文摘ITO （indium oxide doped with tin） thin films were deposited on glass substrates by using ITO pellet with a composition of w（In2O3）=90% and w（SnO2）=10% by electron beam evaporated with End-Hall ion source assisted without extra heating. The rate of deposition and flow rate of oxygen were measured and changed to obtain the best properties of ITO thin films. Furthermore, the post annealing process was done in vacuum at different annealing temperatures for 2 h and at 400℃ for different keeping time, respectively. The relation between optical, electrical properties and structure was discussed in detail.
基金Chinese Ministry of Science and Technology for financial support under construct(2003AA513010)
文摘In_2O_3∶SnO_2(ITO) thin films were fabricated on the substrate of flexible polyethylene terephthalate(PET) by DC magnetron sputtering from a ceramic target of In_2O_3/SnO_2(90∶10). Properties of the thin films were characterized by X-ray diffraction(XRD), four-point probe, Hall-effect measurement, UV-Vis spectrophotometer, and scanning electron microscopy(SEM). The effects of sputtering pressure, oxygen partial pressure and deposition temperature on properties of microstructure and optoelectronics properties of PET/ITO thin films were investigated in detail. High-quality ITO thin films on PET substrates with the resistivity as low as 8.5×10-4 Ω·cm and the optical transmittance over 80% in the visible spectrum range were obtained.
文摘The ITO transparent conductive films were prepared on substrate of quartz glass by sol-gel method.The raw materials were nitrate indium,acetylacetone and the dopant of anhydrous chloride(SnCl4).The process from gel to crystalline film and the microstructure of the films were investigated by DTA-TG,XRD and SEM.The influence of preparation processes on the electricity performance of the films was also studied by four-probe apparatus.The results show that the crystallization process of ITO xerogel completes when the heat treatment temperature reaches 600 ℃.The ITO films possesses on vesicular structures accumulated by spherical particles,and both heat treatment temperature and cooling rate have important effects on the resistivity of ITO films.
基金supported by the National Key R&D Program of China under Grant No.2017YFA0305500National Natural Science Foundation of China under Grant No.61904096,Taishan Scholars Program of Shandong Province under Grant No.tsqn201812006+2 种基金Natural Science Foundation of Shandong Province under Grants No.ZR2022JQ05 and No.ZR2022QF025Shandong University Multidisciplinary Research and Innovation Team of Young Scholars under Grant No.2020QNQT015“Outstanding Youth Scholar and Qilu Young Scholar”Programs of Shandong University.
文摘Omnidirectional photodetectors attract enormous attention due to their prominent roles in optical tracking systems and omnidirectional cameras.However,it is still a challenge for the construction of high-performance omnidirectional photodetectors where the incident light can be effectively absorbed in multiple directions and the photo-generated carriers can be effectively collected.Here,a high-performance omnidirectional self-powered photodetector based on the CsSnBr_(3)/indium tin oxide(ITO)heterostructure film was designed and demonstrated.The as-fabricated photodetector exhibited an excellent self-powered photodetection performance,showing responsivity and detectivity up to 35.1 mA/W and 1.82×10^(10) Jones,respectively,along with the smart rise/decay response time of 4 ms/9 ms.Benefitting from the excellent photoelectric properties of the CsSnBr_(3) film as well as the ability of the CsSnBr_(3)/ITO heterostructure to efficiently separate and collect photo-generated carriers,the as-fabricated photodetector also exhibited an excellent omnidirectional self-powered photodetection performance.All the results have certified that this work finds an efficient way to realize high-performance omnidirectional self-powered photodetectors.
基金supported by BEN TEN THECO.,and National Science Council,under contract 96-2622-E-152-001-CC397-2410-H-152-016
文摘A new effective tool design of three-rank form of electroremoval was present using a precision recycle system offering faster performance in removing the indium-tin-oxide(ITO) thin-films on color filter surface of displays. Higher electric power is not required since the three-rank form tool is adopted as a feeding mode to reduce the response area. The low yield of ITO persists throughout the entire semiconductor production process. By establishing a recycle process of ultra-precise removal of the thin-film nanostructure, defective products in the optoelectronic semiconductors industry can be effectively recycled, decreasing both production costs and pollution. A 5th generation TFT-LCD was used. The design features of the removal processes for the thin-films and the tool design of three-rank form were of major interest. For the precision removal processes, a pulsed current can improve the effect of dreg discharge and contributes to the achievement of a fast workpiece (displays' color filter) feed rate, but raises the current rating. High flow velocity of the electrolyte with a high rotational speed of the tool electrodes elevates the ITO removal effect. A displays' color filter with a fast feed rate is combined with enough electric power to provide highly effective removal. A small thickness of the rank and a small arc angle of the negative-electrode correspond to a higher removal rate for ITO-film. An effective three-rank form negative-electrode provides larger discharge mobility and better removal effect. It only needs a short period of time to remove the ITO easily and cleanly.
文摘In this study, indium tin oxide (ITO) thin films were prepared by electron beam evaporation method on float glass substrates at room temperature (RT). The surface morphology and dynamic scaling behavior of the films were studied by atomic force microscopy (AFM). It was found that average surface roughness values decreased as the film thickness increased from 100 nm to 350 nm. Fractal geometry and statistical physics techniques have been used to study a variety of irregular films within a common framework of the variance thickness. The Hurst exponent H and growth exponent ? for ITO thin films were determined to be 0.73 ? 0.01 and 0.078, respectively. Based on these results, we suggest that the growth of ITO thin films can be described by the combination of the Edwards-Wilkinson equation and Mullins diffusion equation.
