摘要
We deposited indium-tin-oxide(ITO)films on silicon and quartz substrates by magnetron sputtering technology in pure argon.Using electrostatic quadrupole plasma diagnostic technology,we investigate the effects of discharge power and discharge pressure on the ion flux and energy distribution function of incidence on the substrate surface,with special attention to the production of high-energy negative oxygen ions,and elucidate the mechanism behind its production.At the same time,the structure and properties of ITO films are systematically characterized to understand the potential effects of high energy oxygen ions on the growth of ITO films.Combining with the kinetic property analysis of sputtering damage mechanism of transparent conductive oxide(TCO)thin films,this study provides valuable physical understanding of optimization of TCO thin film deposition process.
作者
Maoyang Li
Chaochao Mo
Peiyu Ji
Xiaoman Zhang
Jiali Chen
Lanjian Zhuge
Xuemei Wu
Haiyun Tan
Tianyuan Huang
李茂洋;莫超超;季佩宇;张潇漫;陈佳丽;诸葛兰剑;吴雪梅;谭海云;黄天源(School of Physical Science and Technology,Soochow University,Suzhou 215000,China;Suzhou Maxwell Technologies Co.,Ltd.,Suzhou 215000,China;Jiangsu Key Laboratory of Frontier Material Physics and Devices,Suzhou 215000,China;School of Optoelectronic Science and Engineering,Soochow University,Suzhou 215000,China;Analysis and Testing Center,Soochow University,Suzhou 215000,China;School of Optical and Electronic Information,Suzhou City University&Suzhou Key Laboratory of Biophotonics,Suzhou 215104,China)
基金
supported by the National Key R&D Program of China(Grant No.2022YFE03050001)
the National Natural Science Foundation of China(Grant Nos.12175160 and 12305284).The authors thank Suzhou Maxwell Technologies Co.,Ltd.for partial hardware and particle financial support to carry out the research.
