摘要
In_2O_3∶SnO_2(ITO) thin films were fabricated on the substrate of flexible polyethylene terephthalate(PET) by DC magnetron sputtering from a ceramic target of In_2O_3/SnO_2(90∶10). Properties of the thin films were characterized by X-ray diffraction(XRD), four-point probe, Hall-effect measurement, UV-Vis spectrophotometer, and scanning electron microscopy(SEM). The effects of sputtering pressure, oxygen partial pressure and deposition temperature on properties of microstructure and optoelectronics properties of PET/ITO thin films were investigated in detail. High-quality ITO thin films on PET substrates with the resistivity as low as 8.5×10-4 Ω·cm and the optical transmittance over 80% in the visible spectrum range were obtained.
In2O2 ： SnO2 （ITO） thin films were fabricated on the substrate of flexible polyethylene terephthalate（PET） by DC magnetron sputtering from a ceramic target of In2O3/SnO2 （90 ： 10）. Properties of the thin films were characterized by X-ray diffraction（XRD）, four-point probe, Hall-effect measurement, UV- Vis spectrophotometer, and scanning electron microscopy（SEM）. The effects of sputtering pressure, oxygen partial pressure and deposition temperature on properties of microstructure and optoelectronics properties of PET/ITO thin films were investigated in detail. High-quality ITO thin films on PET substrates with the resistivity as low as 8.5 × 10 ^1 Ω · cm and the optical transmittance over 80% in the visible spectrum range were obtained.
基金
Chinese Ministry of Science and Technology for financial support under construct(2003AA513010)
