The partial deposit films on p-silicon wafers were formed from three kinds of plating solution: chloro-platinic acid, potassium tetranitroplatinate and diammine platinium dinitrate under Nd: YAG laser irradiation. The...The partial deposit films on p-silicon wafers were formed from three kinds of plating solution: chloro-platinic acid, potassium tetranitroplatinate and diammine platinium dinitrate under Nd: YAG laser irradiation. The compositions and properties of the depositswere investigated by AES, SEM and XPS techniques. The Pt deposits have ohmic contactwith p-type silicon.展开更多
文摘The partial deposit films on p-silicon wafers were formed from three kinds of plating solution: chloro-platinic acid, potassium tetranitroplatinate and diammine platinium dinitrate under Nd: YAG laser irradiation. The compositions and properties of the depositswere investigated by AES, SEM and XPS techniques. The Pt deposits have ohmic contactwith p-type silicon.
