摘要
在化学气相沉积(CVD)过程中运用COMSOL Multiphysics建立硅外延生长的层流模型,研究了不同气流设置条件下反应腔体内的气流状态和流速分布。通过优化流场设置,获得了稳定且均匀的气流分布,同时,分析了气流分布对硅外延片生长速率和厚度均匀性的影响。利用LPE-3061D平板式外延炉进行了工艺验证,在重掺Sb衬底上进行硅外延沉积,在优化流场下制备出的硅外延片厚度标准偏差达到0.38%。
The laminar model of silicon chemical vapor deposition epitaxy was established by COMSOL multiphysics.The airflow state and velocity distribution in the chamber were studied under different setting conditions.By optimizing the flow field,stable and uniform airflow distribution was obtained,which showed that the velocity deviation was less than 15%.The effect of flow field distribution on growth rate and thickness uniformity of silicon epitaxial wafer was also studied.Silicon epitaxial wafer was prepared on a heavily Sb-doped silicon substrate by using LPE-3061 Dplate-type epitaxial furnace,and it was demonstrated that the standard deviation of silicon epitaxial wafer thickness was as small as 0.38%with the optimized flow field.
作者
陈涛
李明达
李杨
CHEN Tao;LI Mingda;LI Yang(The 46 Research Institute of CETC,Silicon Epitaxial Materials Division,Tianjin,300220,CHN)
出处
《固体电子学研究与进展》
CSCD
北大核心
2017年第6期438-442,共5页
Research & Progress of SSE
关键词
硅外延片
流场
层流
均匀性
silicon epitaxial wafer
flow field
laminar
uniformity
