使用 PHI-610型扫描俄歇谱仪,研究了 Si 基底上的多层金属薄膜 Au/Ni,在不同退火温度下的冶金学行为。发现在380℃以下,薄膜及 Si 基底间无明显互扩散;而在380℃时,发生薄膜与 Si 基底间的相互扩散,Ni 层不能作为 Au 与 Si 之间的扩散...使用 PHI-610型扫描俄歇谱仪,研究了 Si 基底上的多层金属薄膜 Au/Ni,在不同退火温度下的冶金学行为。发现在380℃以下,薄膜及 Si 基底间无明显互扩散;而在380℃时,发生薄膜与 Si 基底间的相互扩散,Ni 层不能作为 Au 与 Si 之间的扩散阻挡层。随着温度升高,Au与 Si 的相互扩散加剧,这种互扩散造成表面电阻的增加。在 450℃时,薄膜中会形成一种 Ni 的硅化物。这种硅化物是在富 Ni 区和 Si 基底界面处形成,并随着富 Au 区中的 Ni 向硅化物的扩散而逐渐长大。展开更多
X-ray photoelectron spectroscopy has been used to measure the valence band offset （VBO） at the GaN/Ge heterostructure interface. The VBO is directly determined to be 1.13 ±0.19 eV, according to the relationship...X-ray photoelectron spectroscopy has been used to measure the valence band offset （VBO） at the GaN/Ge heterostructure interface. The VBO is directly determined to be 1.13 ±0.19 eV, according to the relationship between the conduction band offset AEc and the valence band offset △Ev：△Ec =EgGaN -EgGe - △Ev, and taking the room-temperature band-gaps as 3.4 and 0.67eV for GaN and Ge, respectively. The conduction band offset is deduced to be 1.6±0.19 eV, which indicates a type-I band alignment for GaN/Ge. Accurate determination of the valence and conduction band offsets is important for the use of GaN/Ge based devices.展开更多
文摘使用 PHI-610型扫描俄歇谱仪,研究了 Si 基底上的多层金属薄膜 Au/Ni,在不同退火温度下的冶金学行为。发现在380℃以下,薄膜及 Si 基底间无明显互扩散;而在380℃时,发生薄膜与 Si 基底间的相互扩散,Ni 层不能作为 Au 与 Si 之间的扩散阻挡层。随着温度升高,Au与 Si 的相互扩散加剧,这种互扩散造成表面电阻的增加。在 450℃时,薄膜中会形成一种 Ni 的硅化物。这种硅化物是在富 Ni 区和 Si 基底界面处形成,并随着富 Au 区中的 Ni 向硅化物的扩散而逐渐长大。
基金Supported by the National Natural Science Foundation of China under Grant Nos 60776015 and 60976008, the National Basic Research Program of China under Grant No 2006CB604907, and the High-Technology R＆D Program of China （Nos 2007AA03Z402 and 2007AA03Z451）.
文摘X-ray photoelectron spectroscopy has been used to measure the valence band offset （VBO） at the GaN/Ge heterostructure interface. The VBO is directly determined to be 1.13 ±0.19 eV, according to the relationship between the conduction band offset AEc and the valence band offset △Ev：△Ec =EgGaN -EgGe - △Ev, and taking the room-temperature band-gaps as 3.4 and 0.67eV for GaN and Ge, respectively. The conduction band offset is deduced to be 1.6±0.19 eV, which indicates a type-I band alignment for GaN/Ge. Accurate determination of the valence and conduction band offsets is important for the use of GaN/Ge based devices.
