摘要
利用离子注入法，以３００ｋｅＶ的能量，７×１０１４ｃｍ－２的剂量，在室温下，对（１００）ＩｎＰ晶体进行稀土（ＲＥ）元素Ｅｒ的注入；分别在６００℃、６５０℃、７００℃、７５０℃、８００℃温度下，采用安瓿闭管恒温退火２０ｈ。二次离子质谱仪（ＳＩＭＳ）观测到稀土元素Ｅｒ原子在ＩｎＰ中的分布，直到８００℃时几乎没有变化；在７７Ｋ温度下，观测到ＩｎＰ中Ｅｒ３＋离子的１．５４μｍ特征光致发光（ＰＬ）峰。
The (100) InP samples were implanted with 300keV Er ions to a dose of 7×10 14 cm -2 at room temperature.The samples were put in an evacuated quartz ampoule together with phosphorus powder and annealed at 600℃、650℃、700℃、750℃、800℃ for 20h,respectively.The Er distribution in InP crystal are observed by secondary ion mass spectroscope (SIMS). The result show that the Er profile for both as implanted and annealed samples is nearly the same. The Er radiated 1.54μm luminescence peak has been observed in Er doped InP at 77K. The mechanism of the influence of annealing temperature on intensity of PL from Er implanted InP is propiosed in this paper.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
1998年第2期152-155,共4页
Journal of Synthetic Crystals
基金
哈尔滨师范大学青年科研基金
关键词
光致发光
稀土元素
半导体材料
磷化铟
铒
ion implantation,photoluminescence (PL),ligand,rare earth element,semiconductor material,phosphoraus indium
