摘要
用电子回旋共振等离子体进行了硅基材料的刻蚀技术研究,进行了沟槽刻蚀实验,得到了较为陡直的侧壁。制作了精细图形,等离子体损伤较低。
Etching techniques of silicon-based materials were developed by a microwave ECR plasma source.Trench etching studies were carried out on silicon subatrate and steep side wall patterns were obtained.Fine tiny patterns with low plasma damage were also fabricated.
出处
《真空电子技术》
2004年第2期61-63,共3页
Vacuum Electronics
