摘要
本文报告了一种获得侧壁陡直的硅深槽新技术．实验中采用一种新材料──氮化锆（ＺｒＮ）作为反应离子刻蚀的掩模，所需掩模厚度约５００．采用氟基气体ＳＦ６作为刻蚀气体，并附加Ａｒ和Ｏ２，这样刻蚀过程中在槽的侧壁会形成氧化硅作为阻挡刻蚀层，结果得到了深约６μｍ，侧壁垂直接近９０°的硅深槽．
AbstractA new silicon trench etching process has been developed by using a new material ZrN as mask which is about 500 thick. The chemistry employed in RIE process is SF6 with Ar and O2 additives. A thin oxide layer inside the trench could be formed by oxygen plasma to prevent the sidewall from being etched. The experiment resultsshow the ideal trench profile of about 6μm deep with vertical sidewalls nearly 90°
