摘要
介绍了2.5～40Gb/s的光通信收发器处理芯片的研究情况,芯片功能包括复接器、激光驱动器、前置放大器与限幅放大器、时钟恢复和数据判决电路以及分接器。采用的工艺有0.18/0.25μmCMOS,0.15/0.2μmGaAsPHEMT和2μmGaAsHBT等,采用多项目晶圆方式和国外先进的工艺生产线进行芯片制作。研究中采用了高速电路技术和微波集成电路技术,如采用SCFL电路、超动态D触发器电路、同步注入式VCO、分布放大器、共面波导和传输线技术等。在SDH155Mb/s～2.5Gb/s的收发器套片设计方面已实现产品化。还介绍了10Gb/s的收发器套片产品化问题,如封装问题等,讨论了40Gb/s以上速率芯片技术的发展趋势,包括高速器件建模和测试问题等。
The transceiver integrated circuits tehcnology of 2.540 Gb/s was studied for optical-fiber communication. The ICs include multiplexer, laser-driver, preamplifier and limiting amplifier, clock recovery and data decision, demultiplexer. The technologies of 0.18/0.25 μm CMOS, 0.15/0.2 μm GaAs PHEMT and 2 μm GaAs HBT were used to research and design the ICs. The MPW(multi-projet wafer) method and advanced foundry technology were adopted to produce the ICs. The high-speed circuit technology and MMIC technology were adopted to research our circuit, such as SCFL structure, super-dynamic DFF, synchronization injection VCO, distributed amplifier, coplanar waveguide and transmission-line technology. The 155 Mb/s2.5 Gb/s SDH transceiver ICs was produced. The developing trand of above 40 Gb/s ICs design technology was discussed, including high-speed device modeling and the ICs testing.
出处
《中国有色金属学报》
EI
CAS
CSCD
北大核心
2004年第F01期369-380,共12页
The Chinese Journal of Nonferrous Metals
