摘要
本文研究了以TMG、固体In和固体As作为分子束源的碳掺杂In_xGa_(1-x)As(x=0-0.98)的MOMBE生长与特性,发现衬底温度和In分子束强度对样品的生长速率、In组分含量x及载流子浓度具有强烈影响。在x=0-0.8的范围内空穴浓度随x的增大而减小,当x>0.8时导电类型转变为n型。探讨了MOMBE法生长In_xGa_(1-x)As的掺碳机理及其对载流子浓度和导电类型的影响,并用X射线衍射(XRD)和光致发光谱(PL)等方法分析了外延层质量。
The properties of carbon doped In_xGa_(1-x)As(x=0.98) grown by MOMBE usingTMG, solid In and Solid As have been studied systematically.It is shown that the growthrate, indium mole fraction x and carrier concentration of the samples are strongly affected bythe growth temperature and indium pressure-equivalent beam flux. The hole concentrationdecreases with increasing indium mole fraction in the range of x= 0-0.8, and the conductiontype becomes n-type when x is higher than 0. 8.The mechanism of carbon incorporation inIn_xGa_(1-x)As grown by MOMBE and its influence on carrier concentration and conduction typeare discussed according to the experimental results. The quality of the epitaxial layers wasanalysed by X-ray diffraction (XRD) and photoluminescence(PL).
关键词
半导体器件
掺杂
INGAAS
MOMBE
碳
Carbon
Molecular beam epitaxy
Photoluminescence
Semiconductor doping
