摘要
采用连续波电光检测法,对GaAs/GaAlAs双异质结激光器列阵有源区进行定点测量,实验结果反映了发光区内及发光区外电场随电流变化的不同规律。文中对实验结果给出了合理解释。
Using continuous wave electro-optic probing (CWEOP) method, we probed the variation of electric field with injected current at the fixed points in the active layer. The experimental result shows that there exists difference between the electric field and the injected current within and out of the lasing region. The expla- nation is given.
出处
《半导体光电》
CAS
CSCD
北大核心
1993年第4期371-374,387,共5页
Semiconductor Optoelectronics
关键词
激光器列阵
电光检测
半导体激光器
LD Array
Active Layer
Continuous Wave Electro--Optic Probing (CWEOP)
