摘要
利用连续波电光检测法首次成功地对AlGaAs/GaAs半导体激光器中的电场分布进行了测量.测量结果直接表征了器件注入电流扩展和载流子限制特性. 本文简要地描述了方法的原理和实验装置,给出了典型的测量结果并对其进行了讨论.
The electric field distributions in AlGaAs/GaAs semiconductor lasers are successfully measured using Continuous Wave Electro-Optic Probing (CWEOP) method for the first time.The experimental results reflect directly the characteristic of carrier confinement and spread ofinjected currenc. This paper describes briefly the principle and the experimental setup ofthe CWEOP method, and gives the experimental results and discussion. The prospects of theCWEOP method are reviewed.
基金
国家自然科学基金
国家863计划资助
