摘要
采用光伏方法测量了1MeV高能电子辐照(辐照剂量为10^(13)～10^(16)cm^(-2))前后硅单晶少子扩散长度的变化;结合红外光吸收谱的测量结果,分析了高能电子辐照对硅单晶性能的影响。实验结果表明:高阻硅比低阻硅具有更强的抗辐射能力,大剂量的电子辐照可以改变n型硅的导电类型。文中还计算了电子辐照在硅中所产生的缺陷浓度等一些重要参数。
The changes of the minority carrier diffusion lengths of the silicon single crystal before and after 1MeV high-energy electron irradiation at flux ranging from 10^(13)to10^(16)cm^(-2)have been measured by photovoltage technique. The effects of high-energy electron irradiation on the properties of silicon are studied by photo- voltage and infrared absorption spectra. The experimental results show that the ra- diation resistance of the silicon with higher resistivity is higher and that irradiation at large flux can change n-type silicon into p-type. Some important parameters such as defect concentration induced by electron irradiation are calculated.
出处
《半导体光电》
CAS
CSCD
北大核心
1993年第4期356-361,共6页
Semiconductor Optoelectronics
关键词
硅单晶
电子辐照
光伏
深能级
Silicon Single Crystal
Electron Irradiation
Photovoltage
DeepLevel
