摘要
叙述了256×256元PtSi肖特基势垒红外焦平面的工作原理和设计考虑。器件采用四相ITCCD结构。像元尺寸和填充系数分别为60×50(μm^2)和35％。采用薄金属膜和光腔结构改善了器件的灵敏度。势垒高度为0.22ev,相应的截止波长为5.6μm。在室温目标下,用该器件摄得了较好的红外图像。
The principle of operation and design consideration of 256×256 ele- ment PtSi Schottky harrier infrared focal plane are described in this paper.The de- vice is designed with quaur-phased ITCCD structure.The pixel size is 60×50 (μm^2)with fill factor of 35%.The sensitivity is improved by using thin metal film and optical cavity.The barrier height is 0.22eV with the corresponding cut-off wavelength of 5.6μm.The device has achieved a fairly good infrared image.
出处
《半导体光电》
CAS
CSCD
北大核心
1993年第3期288-292,300,共6页
Semiconductor Optoelectronics
关键词
红外焦平面
灵敏度
电荷耦合器件
Infrared Focal Plane
CCD
Barrier Height
Optical Cavity
Sensitivity
