摘要
本文简要报道了具有势垒加强层的长波长InGaAs MSM-PD和单片集成MSM-PD/FET的进展。本文认为采用高阻掺Fe-InGaAs势垒加强层是有效和简单的,因为它兼有势垒加强和介于MSM-PD与FET结构之间的电隔离作用。
Progress in long wavelegth GalnAs MSM-PD with barrier enhance- ment layer and monolithically integrated InGaAs-PD/FET is reported briefly in this paper.It is assumed that it should be effective and simple to use high resistive Fe- doped InGaAs barrier enhancement layer which exhibits the characteristic of barrier enhancement and electric isolation between the MSM-PD and the FET structure.
出处
《半导体光电》
CAS
CSCD
北大核心
1993年第3期238-242,249,共6页
Semiconductor Optoelectronics
关键词
抛垒加强层
MSM-PD/FET
单片集成
Barrier Enhancement Layer
Monolithically Integreated InGaAs MSM-PD/FET
