摘要
本文以单栅MOSFET的物理模型为基础,导出了双栅MOSFET的物理模型,该模型中,不仅考虑了漏压对沟道长度的调制效应,而且也考虑了栅压对沟道中载流子迁移率的影响,由该模型导出的双栅MOSFET的V—I特性与实验结果做了比较,二者符合得很好,并对器件的V—I特性从物理机制上进行了详细讨论。
This paper derives the Dual-Gate MOSFET'S physical models based on the single gate MOSFE'S physical model. The model consider not only the effect of drain voltage modulation on channel but the effeet of the gate voltage on channel carrier mobility as well. Dual-Gate MOSFET V-I charcteristics derived from the models are compared with experiment. Both are in good agreement. Discussing of V-I characteristices of devices on the grounds of the physical mechanism has also been proceeded in detail.
出处
《辽宁大学学报（自然科学版）》
CAS
1989年第1期45-50,共6页
Journal of Liaoning University：Natural Sciences Edition
