摘要
提出了一种新的改善传感器温度特性的方法。通过在压力传感器芯片上集成多晶硅电阻网络与温度传感器 ,借助传感器信号处理单元 ,可以方便地实现对灵敏度系数的补偿。经过补偿 ,传感器的零点温漂达到 1×10 - 4/℃ ,灵敏度温漂低于 - 2× 10 - 4/℃。这种方法补偿的温区宽 ,具有很强的通用性 ,使高温压力传感器十分有效的温度补偿方法。
A new method to improve the temperature dependence of polycrystalline silicon pressure sensor is presented. By means of integrating polycrystalline silicon resistor network and a temperature sensor on chip, the temperature coefficient of offset (TCO) and sensitivity (TCS) of the sensor are effectively compensated to 1×10 -4 /℃ and-2×10 -4 /℃, respectively. Showing advantages of wide compensating range and good compatibility, this method is a quite practical way for temperature compensation of the high temperature piezoresistive pressure sensor.
出处
《传感技术学报》
CAS
CSCD
2004年第1期118-121,共4页
Chinese Journal of Sensors and Actuators
关键词
多晶硅
压力传感器
灵敏度
温度补偿
掺杂浓度
high-temperature polycrystalline stalline silicon pressure sensor
temperature independence
sensitivity
doping concentration
