摘要
采用等离子体增强化学气相沉积 (PECVD) ,在单晶硅衬底上生长氮化硅 (SiN)薄膜 ,再对薄膜进行快速热退火处理 ,研究了在不同温度下SiN薄膜的退火特性 .通过椭圆偏振光仪测量了薄膜厚度和薄膜的折射率 ,发现退火后薄膜的厚度下降 ,折射率升高 ;采用准稳态光电导衰减QSSPCD测少数载流子寿命 ,发现少子寿命有很大程度的下降 .还研究了SiN薄膜对多晶硅电池性能的影响 。
Silicon nitride (SiN) thin films deposited by PECVD were annealed by rapid thermal processing (RTP) on different conditions. The characteristics of annealed films in different temperatures were studied . The thickness and the refractive index of the films were measured by means of spectral ellipsometry. Quasi steady state photoconductance (QSSPC) measurement was used to determine the effective minority carrier lifetimes of the samples. The study indicated that the thickness and the minority carrier lifetimes of the SiN films decreased and the refractive index increased after annealing. The effect of SiN films on the characteristic of polycrystalline silicon solar cells was also investigated. It showed that the conversion efficiency of solar cells rised sharply by using SiN film as an antireflection coating.
出处
《北京师范大学学报（自然科学版）》
CAS
CSCD
北大核心
2004年第2期221-223,共3页
Journal of Beijing Normal University(Natural Science)
基金
北京市科技新星计划资助项目 (H0 2 0 82 14 80 130 )
