摘要
讨论了薄膜热应力的产生原因及其计算方法。热应力与薄膜和基片的热膨胀系数、基片温度及其分布密切相关。利用溅射沉积在基片表面上的Fe－Ni薄膜热电偶测量薄膜沉积过程中的基片温度及其变化。Fe－Ni薄膜热电偶具有易于制作、稳定性好和动态响应快等优点，热电势率也较高（0．022mV／℃）。最后，简要介绍了磁控溅射Co－Cr合金膜的热应力和本征应力的研究结果。
The origin and calculation of thermal stress in thin films are discussed. Thermal stress isclosely related to thermal expansion coefficients of the film and substrate as well as to substrate temperature and its distribution. Therefore,in this experiment the substrate temperature and its variation duringdePosition are measured by an Fe-Ni thin film thermocouple precoated on the substrate surface by sputtering. Many experiments show that the Fe-Ni thin fim thermocouples have the advantages of easy making,high stability and fast dynamic response,and the thermoelectric potential is also higher (0.022 mV/℃ ). Finally,the research results about the thermal and intrinsic stresses in Co-Cr alloy thin films deposited bymagnetron sputtering are introduced briefly.
出处
《真空科学与技术》
CSCD
1996年第5期347-354,共8页
Vacuum Science and Technology
基金
国家自然科学基金!9587007-03
关键词
薄膜
热应力
温度测量
垂直磁记录介质
Thin film, Thermal stress, Temperature measurement, Perpendicular magnetic recording medium
