摘要
采用真空蒸发工艺制备镱薄膜传感器,在小于1GPa压力范围内对未经任何处理和300℃真空热处理1h两组镱薄膜传感器进行准静态加载标定,后者的压阻系数明显高于前者,并且大于箔式镱传感器的压阻系数,结合扫描电镜和电学性能测试分析,发现热处理有助于薄膜晶粒长大,降低薄膜电阻率,从而提高了镱薄膜传感器的压阻灵敏度。XRD测试分析结果表明,加压有促使薄膜晶粒长大的趋势。镱薄膜传感器制作工艺简单、性能稳定,在工业中具有广泛的用途。
Yb film sensor was fabricated by vacuum evaporation technique,and its performance has been studied under the longitudinal quasi-static loading in the range of 1 GPa.The comparison of two group Yb film sensors,one is unheated treatment and the other is heat treatment at 300 ℃ for 1 h in vacuum,indicates that the piezoresistance coefficient of the heated film is larger than not only the unheated,but also the Yb foils.With the analyses of SEM and electric performance,it is discovered that heat treatment helps to grow crystal,decrease the film resistivity and improve the piezoresistance coefficient.XRD analysis reveals that pressure may promote the growth of Yb crystals.Also,after treatment by pressure (≈1 GPa) Yb film sensors are easy to fabricate and have stable performance,which may have extensive usage in industry.
出处
《高压物理学报》
CAS
CSCD
北大核心
2004年第1期90-93,共4页
Chinese Journal of High Pressure Physics
基金
军事电子预研基金资助项目(AW030412)
