摘要
以高纯石墨作靶、Ar/CHF3作源气体采用射频反应磁控溅射法室温下制备了氟化类金刚石薄膜(F DLC)。发现随着射频功率的增加,F DLC薄膜拉曼光谱的D峰与G峰强度之比ID/IG加大,薄膜中芳香环式结构比例上升。红外吸收光谱则显示射频功率增加导致薄膜中的氟含量上升,氟原子与碳原子以及芳香环的耦合加强。控制射频功率可以有效调制薄膜中的氟含量以及芳香环结构的比例,F DLC可能成为热稳定性较好的碳氟薄膜。
The F-DLC films were prepared by reactive magnetron sputtering with trifluromethane (CHF3) and Ar as source gases and pure graphite as a target. The intensity ratio I(D)/I(G) of Raman bands of disordered graphite (D-band) and graphite (G-band) of F-DLC films has been on the rise with the increasing of radio frequency (RF) input power, which indicates an increase of the fraction of aromatic ring. The infrared absorption spectra reveals that with the increasing of RF input power, the coupling of F atoms and C atoms and aromatic rings strengthens, spilt of peaks increases and the position of 1220 cm-1 peak shifts to high frequency. It is proposed that these were just due to an increase in the content of fluorine atoms in the films. The concentration of fluorine atoms and the fraction of aromatic rings in the films can be effectively modulated by changing RF input power. The F-DLC films may become C-F films with high-thermal stability.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2004年第1期52-54,共3页
Journal of Functional Materials
基金
国家自然科学基金资助项目(10175048)
关键词
氟化类金刚石薄膜
结构分析
反应磁控溅射
拉曼光谱
红外吸收光谱
Absorption spectroscopy
Argon
Aromatic compounds
Atoms
Fluorine
Graphite
Magnetron sputtering
Thermodynamic stability
