摘要
在工作气压为0.80Pa的氧氩气混合气氛下,改变氧与氩的流量比(O2/Ar:0.10,0.20,0.30),在预先镀10nm左右SiO2的普通玻璃基片上用直流(D.C.)磁控溅射法制备了300nm左右的TiO2薄膜试样。离线在500℃、氧气氛下对试样热处理2h。用X射线光电子能谱(XPS)和X射线衍射仪(XRD)分别研究了试样热处理前后的表面元素组成、离子状态和物相组成,用接触角分析仪测试了试样在紫外光(UV)照射后的水润湿角。
TiO2 thin films with the thickness of 300nm were deposited, at a total pressure of 0.80Pa in mixed 02 and Ar atmosphere (O-2/Ar: 0.10, 0.20, 0.30), on SiO2-coated glass substrates by DC reactive magnetron sputtering. The films were annealed off line at 500degreesC for 2 hours in O-2 gas flow. The characterization of the films, before and after annealing, was carried out using XPS and XRD, and the contact angle of water was measured using a commercial Face Contact Angle Meter after the films were irradiated by UV.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2003年第5期339-343,共5页
Rare Metal Materials and Engineering
基金
湖北省自然科学基金资助项目(2001abb077)
教育部科学技术重点项目(99087)
