摘要
室温下通过直流反应磁控溅射的方法,利用碳钛镶嵌靶在Ar/O_2气氛中制备了碳掺杂纳米TiO_2薄膜,并通过X射线衍射(XRD)、UV-Vis透射光谱以及光电化学的方法对薄膜进行了表征.XRD测试结果表明,靶中碳和钛的面积比小于0.10时,碳掺杂的引入有利于TiO_2薄膜的晶格生长,并随靶中碳面积的增加,薄膜的结晶度也相应提高.由透射光谱计算得到的禁带宽度表明,靶中碳和钛的面积比为0.05时,薄膜的禁带宽度由纯TiO_2薄膜的3.4 eV减小到3.1 eV.光电测试结果表明,靶中碳和钛的面积比小于0.10时,碳的引入可以提高薄膜的光电响应,面积比为0.10时,可见光下0 V时薄膜的光电流密度为0.069μA·cm^(-2);但碳和钛的面积比增加到0.16时,测得的薄膜光电响应异常.
Carbon-doped TiO2 thin films were prepared by direct current （DC） reactive magnetron sputtering at room temperature in an Ar/O2 ambience, using a titanium target incrusted with graphite pieces. The films as prepared were characterized by X-ray diffraction （XRD）, UV-Vis transmission spectra, and photoelectrochemistry methods. The XRD patterns of the films showed that the doping of carbon was beneficial to the crystallization of the films. When the ratio of area of C/Ti in the target was less than 0.10, the crystallization of the films increased with the increase in graphite area in the target. The band gap of the films decreased from 3.4 eV to 3.1 eV when the ratio of area of C/Ti in the target was 0.05. The photoelctrochemical property of the films improved when the ratio of area of C/Ti in the target was less than 0.10. When this ratio was 0.10 the photocurrent density of the film was 0.069 μA .cm^-2 at 0 V under visible light illumination. However, an abnormal photoelectrochemical response was observed when the ratio of area of C/Ti in the target was 0.16.
出处
《物理化学学报》
SCIE
CAS
CSCD
北大核心
2007年第11期1662-1666,共5页
Acta Physico-Chimica Sinica
基金
国家高技术研究发展规划(863项目)(2006AA052121)
国家自然科学基金(20673028)
上海浦江人才计划(2006)资助
关键词
直流反应磁控溅射法
碳/钛镶嵌靶
碳掺杂的二氧化钛薄膜
光电化学
DC reactive magnetron sputtering mothed
Graphite/titanium target
Carbon-doped TiO2 thin film
Photoelectrochemistry
