摘要
在不同温度和红外光照下，测量了经中子辐照的单晶硅表面光电压，确定了其深能级的位置和少子扩散长度；由双能级复合理论，推导了中子辐照单晶硅的深能级复合中心和寿命的计算公式；计算了热中子辐照和高能中子辐照单晶硅后的深能级密度、费米能级和其他有关重要参数。
The photovoltage spectra of neutron-irradiated single crystal silicon under infra-red illumination and at low temperatures are measured. The deep level and minority carrier diffusion length are determined. By the double-level recombination model,the statistics formulas of the deep level and lifetime are derived for neutron-irradiated single crystal silicon. Some important parameters of the silicon irradiated with high energy and thermal neutron are calculated respectively.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1994年第2期136-141,共6页
Research & Progress of SSE
基金
国家自然科学基金
关键词
中子辐照
单晶硅
参数
Neutron-Irradiation,Single Crystal Silicon,Deep Level,Surface Photovoltaic Effect,Minority Carrier Diffusion Length or Lifetime
