摘要
在电子助进化学气相沉积(EACVD)类金刚石薄膜中,使用和比较CH_4/H_2与CH_4/H_2/Ar两种体系,用静电探针测量这两种体系的电子温度、电子密度,结果表明,在CH_4/H_2/Ar体系中,电子密度较高,使成膜的速率增加。
In deposition of the diamond-like films by electron assisted plasma chemical vapor deposition, two systems (CH4/H2 and CH4/H2/Ar) have been used and compared. The electron temperature and electron density have been measured by means of Langmuir single probe. The results show that the electron density in CH4/H2/Ar is higher than that in CH4/ H2, and the growth rate of the films increases in CH4/H2/Ar system.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1992年第3期465-470,共6页
Acta Physica Sinica
