摘要
介绍了 EEPROM的电学模型 ,模拟分析了阈值电压变化与写入时间、写入电压、隧道孔面积、浮栅面积的关系 .根据模拟结果 ,采用 0 .6μm CMOS工艺 ,对双层多晶硅 FL OTOX EEPROM进行了流片 ,PCM的测试结果验证了模拟结果在实际工艺中的可行性 .
In order to evaluate the process parameters of two-polysilicon FLOTOX EEPROM,the electrical model of EEPROM is introduced.The relation between threshold voltage and writing time,programming voltage,tunnel area and floating area is simulated.Based on the simulating results and 0.6μm CMOS process technique,the two-polysilicon FLOTOX EEPROM is fabricated.Finally,the feasibility of simulating results is verified by PCM testing results.Therefore,the process evaluation of FLOTOX EEPROM will be the ground work for manufacturing high quality memory cell.
