摘要
随着超大规模集成电路的发展,半导体芯片中元器件的特征尺寸越来越小,已经进入了深亚微米时代。近几年新发展起来的红外发光显微镜技术,能利用集成电路(IC)器件中大多数缺陷都呈现微弱红外发光的现象,迅速准确地定位失效点,成为对IC进行失效缺陷定位的有力工具。本文介绍了半导体的发光机理,红外发光显微镜的基本结构、主要部件及技术特点。通过对两个IC失效样品的分析实例,介绍红外发光显微镜及其补充技术——激光束诱导电阻率变化测试技术在IC失效分析中的具体应用。
With the development of very large scale integrated circuit, the specific size of components in semiconductor chips is getting smaller and smaller and is entering a submicron era. The infrared emission microscopy is a new technique developed in recent years. Based on the fact that most defects in integrated circuit devices will emit weak infrared light, this technique can localize the fuilure point rapidly and accurately. This paper introduces the light emission mechanism of semiconductor devices, and the basic construction, the main components and the characteristics of infrared emission microscope. Through two examples, the applications of infrared emission microscopy and its supplementary technology （optical beam induced resisteance change） in integrated circuit failure analysis are described.
出处
《分析仪器》
CAS
2008年第5期15-18,共4页
Analytical Instrumentation
