摘要
通过氨化射频溅射工艺生长的纳米Ga2 O3薄膜 ,在石英衬底上反应自组装生成了高质量的GaN纳米线。用X射线衍射 (XRD)、透射电镜 (TEM)和高分辨电镜 (HRTEM)对样品的组分、形貌和结构进行了分析。生成的GaN纳米线平直光滑 ,其直径为 2 0～ 12 0nm ,长可达 5 0 μm;纳米线为高质量的单晶六方纤锌矿GaN ,沿 [110 ]方向生长。用此工艺制备GaN纳米线 ,简单新颖 。
High quality gallium nitride nanowires were self assembled on quartz through ammoniating nano Ga 2O 3 thin films deposited by rf magnetron sputtering. X ray diffraction (XRD), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM) were used to characterize the composition, morphology and structures of the samples. The formed straight and smooth GaN nanowires have diameters of 20 to 120 nm and lengths up to 50 μm. The nanowires are high quality single crystal hexagonal wurtzite GaN and possess the growth direction of . This is a simple and novel technique of fabricating GaN nanowires without the assistance of a template or catalyst.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2003年第6期684-687,共4页
Chinese Journal of Rare Metals
基金
国家自然科学基金资助项目 ( 90 2 0 10 2 5
60 0 710 0 6)
