摘要
利用类似Delta掺杂技术在硅衬底上沉积Mg:Ga2O3薄膜,然后在850℃下对薄膜进行氨化,反应后制备出大量Mg掺杂GaN纳米线.采用扫描电子显微镜(SEM)、X射线衍射(XRD)、傅里叶变换红外(FTIR)光谱和高分辨透射电子显微镜(HRTEM)对样品进行分析.结果表明,Mg掺杂GaN纳米线具有六方纤锌矿单晶结构,纳米线的直径在30-50nm范围内,长度为几十微米.
Large-scale Mg-doped GaN nanowires were synthesized by ammoniating Mg：Ga2O3 thin films at 850 ℃ which were deposited on the Si substrate using the resembling Delta doping method. These GaN nanowires were characterized by scanning electron microscopy （SEM）, X-ray diffraction （XRD）, Fourier transformed infrared （FTIR） spectroscopy and high resolution transmission electron microscopy （HRTEM）. The results indicated that nanowires were hexagonal wurzite GaN single crystals. The diameter of nanowires was in the range of 35-50 nm with lengths of up to several tens of micrometers.
出处
《物理化学学报》
SCIE
CAS
CSCD
北大核心
2009年第1期113-115,共3页
Acta Physico-Chimica Sinica
基金
国家自然科学基金(90201025
90301002)资助项目
