摘要
本文研究了用无质量分析的离子注入机进行95keV(N2^+,N^+)注入、高温退火和薄层外延获得的SOI(Silicon on Insulator)材料的结构与电学性质。结果表明,离子注入剂量是影响Si_3N_4埋层形成和上层硅质量的关键。
The structures and electrical properties of SOI material formed by 95keV(N_2^+, N^+) implantation into silicon usiug an ion implanter without mass analysis, high temperature annealing and thin film epitaxial growth were investigated. The results showed that in order to obtain the good SOI material, the ion implantation dose is a important parameter, which has a great influence upon the formation of buried nitride layer and the quality of top sillicon layer.
出处
《微电子学与计算机》
CSCD
北大核心
1992年第8期1-4,共4页
Microelectronics & Computer
关键词
SOI材料
离子注入
硅
SOI material, Ion implantation, Thin film epitaxial growth
